Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

Abstract

Local variations in the charge distribution at semiconductor interfaces can lead to energy level band bending in the structure’s band diagram. Measuring this band bending is important in semiconductor electronics and quantum technologies, but current methods are typically only surface sensitive and are unable to probe the extent of band bending at a depth within the semiconductor. Here, we show that nitrogen–vacancy centres in diamond can be used as in situ sensors to spatially map band bending in a semiconductor device. These nitrogen–vacancy quantum sensors probe the electric field associated with surface band bending, and we map the electric field at different depths under various surface..